 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC161-16/D Amplifier Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER BC161-16 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value - 60 - 60 - 5.0 - 1.0 0.8 4.6 3.7 20 - 65 to + 200 Unit Vdc Vdc Vdc Adc Watts mW/C Watts mW/C C 3 2 1 CASE 79-04, STYLE 1 TO-39 (TO-205AD) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 219 50 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Cutoff Current (IE = 0, VCES = - 60 Vdc) (IE = 0, VCES = - 60 Vdc, TAmb = 150C) Collector - Emitter Breakdown Voltage (IC = - 100 Adc, IE = 0) Collector - Emitter Breakdown Voltage(1) (IC = - 10 mAdc, IB = 0) Emitter - Base Breakdown Voltage (IE = - 100 mAdc, IC = 0) 1. Pulsed: Pulse Duration = 300 ms, Duty Cycle = 2.0%. ICES -- -- V(BR)CES V(BR)CEO V(BR)EBO - 60 - 60 - 5.0 - 100 - 100 -- -- -- nAdc Adc Vdc Vdc Vdc (Replaces BC160-16/D) Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1997 1 BC161-16 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain(1) (IC = - 100 mAdc, VCE = - 1.0 Vdc) Collector - Emitter Saturation Voltage(1) (IC = - 1.0 Adc, IB = - 0.1 Adc) Base - Emitter Saturation Voltage(1) (IC = - 1.0 Adc, VCE = - 1.0 Vdc) hFE VCE(sat) VBE(on) 100 -- -- 250 - 1.0 - 1.7 -- Vdc Vdc SMALL- SIGNAL CHARACTERISTICS Gain Bandwidth Product (IC = - 50 mAdc, VCE = - 10 Vdc, f = 20 MHz) Input Capacitance (VEB = - 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Turn-On Time (IC = - 100 mAdc, IB1 = - 5.0 Adc) Turn-Off Time (IC = - 100 mAdc, IB1 = IB2 = - 5.0 Adc) 1. Pulsed: Pulse Duration = 300 ms, Duty Cycle = 2.0%. fT Cib Cobo ton toff 50 -- -- -- -- -- 180 30 500 650 MHz pF pF ns ns SWITCHING TIME EQUIVALENT TEST CIRCUITS 2 < t1 < 500 s 2 < t2 < 5.0 ns 2 < t3 > 1.0 s DUTY CYCLE = 2.0% + 8.8 V SCOPE 200 -10.85 V PULSE WIDTH = 200 ns RISE TIME 2.0 ns DUTY CYCLE 2.0% RB 11.2 V t1 t2 t3 0 200 RB 1N916 + 3.0 V - 30 V + 2.0 V 0 RC 59 - 30 V RC 59 SCOPE Figure 1. Turn-On Figure 2. Turn-Off 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data BC161-16 TRANSIENT CHARACTERISTICS 25C 100 50 CAPACITANCE (pF) 30 20 10 Ccb 5.0 3.0 2.0 1.0 - 0.1 - 0.2 - 0.3 - 0.5 - 1.0 - 2.0 - 3.0 - 5.0 - 10 - 20- 30 - 50 REVERSE VOLTAGE (VOLTS) - 100 Ceb Q, CHARGE (nC) 100C 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 - 10 QA VCC = - 30 V IC/IB = 10 QT - 20 - 30 - 50 - 100 - 200 - 300 IC, COLLECTOR CURRENT (mA) - 500 - 1000 Figure 3. Capacitances Figure 4. Charge Data 100 70 50 t, TIME (ns) 30 20 VBE(off) = 0 V VBE(off) = 2.0 V IC/IB = 10 100 70 50 t, TIME (ns) 30 20 VCC = - 30 V IC/IB = 10 10 7.0 5.0 - 10 10 7.0 - 20 - 30 - 50 - 70 - 100 - 200 - 300 - 500 - 700 - 1000 IC, COLLECTOR CURRENT (mA) 5.0 - 10 - 20 - 30 - 50 - 70 - 100 - 200 - 300 - 500 - 700 - 1000 IC, COLLECTOR CURRENT (mA) Figure 5. Delay Time Figure 6. Rise Time 1000 700 500 t s, STORAGE TIME (ns) 300 200 100 70 50 30 20 10 - 10 IB1 = IB2 IC/IB = 10 t f , FALL TIME (ns) 200 VCC = - 30 V IC/IB = 10 IB1 = IB2 100 VCC = - 30 V 70 50 30 20 ts = ts - 1/3 tf - 20 - 30 - 50 - 70 - 100 - 200 - 300 - 500 - 700 - 1000 IC, COLLECTOR CURRENT (mA) 10 - 10 - 20 - 30 - 50 - 70 - 100 - 200 - 300 - 500 - 700 - 1000 IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 BC161-16 SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25C 10 9.0 8.0 NF, NOISE FIGURE (dB) 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 f, FREQUENCY (kHz) 2.0 3.0 5.0 10 RS = OPTIMUM SOURCE RESISTANCE IC = -1.0 mA, RS = 100 -100 A, RS = 680 -10 A, RS = 7.0 k NF, NOISE FIGURE (dB) 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 50 f = 1.0 kHz IC = -1.0 mA 100 200 300 500 1.0k 2.0k 3.0k 5.0k 10k RS, SOURCE RESISTANCE (OHMS) 20k 30k 50k -100 mA -10 mA Figure 9. Frequency Effects Figure 10. Source Resistance Effects h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C This group of graphs illustrates the relationship of the "h" parameters for this series of transistors. To obtain these curves, 4 units were selected and identified by number - the same units were used to develop curves on each graph. 300 200 UNIT 4 h fe , CURRENT GAIN 100 70 50 30 20 15 - 0.1 - 0.2 - 0.3 - 0.5 - 1.0 - 2.0 - 3.0 IC, COLLECTOR CURRENT (mA) - 5.0 - 10 3 2 1 hie , INPUT IMPEDANCE (k OHMS) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 - 0.1 - 0.2 - 0.3 - 0.5 - 1.0 - 2.0 - 3.0 IC, COLLECTOR CURRENT (mA) - 5.0 - 10 4 3 2 UNIT 1 Figure 11. Current Gain 100 70 50 30 20 3 10 2 7.0 5.0 3.0 2.0 1.0 - 0.1 UNIT 1 - 0.2 - 0.3 - 0.5 - 1.0 - 2.0 - 3.0 IC, COLLECTOR CURRENT (mA) - 5.0 - 10 4 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 - 0.1 Figure 12. Input Impedance h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) hoe, OUTPUT ADMITTANCE (m mhos) 4 3 2 UNIT 1 - 0.2 - 0.3 - 0.5 - 1.0 - 2.0 - 3.0 IC, COLLECTOR CURRENT (mA) - 5.0 - 10 Figure 13. Voltage Feedback Ratio 4 Figure 14. Output Admittance Motorola Small-Signal Transistors, FETs and Diodes Device Data BC161-16 STATIC CHARACTERISTICS 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 - 1.0 25C - 55C hFE , DC CURRENT GAIN (NORMALIZED) TJ = 175C VCE = -1.0 V VCE = -10 V - 2.0 - 3.0 - 5.0 - 7.0 - 10 - 20 - 30 - 50 - 70 IC, COLLECTOR CURRENT (mA) - 100 - 200 - 300 - 500 - 700 - 1000 Figure 15. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) - 1.0 TJ = 25C - 0.8 IC = - 1.0 mA - 10 mA - 100 mA - 500 mA - 0.6 - 0.4 - 0.2 0 - 0.005 - 0.007 - 0.01 - 0.02 - 0.03 - 0.05 - 0.07 - 0.1 - 0.2 - 0.3 - 0.5 - 0.7 - 1.0 IB, BASE CURRENT (mA) - 2.0 - 3.0 - 5.0 - 7.0 - 10 - 20 - 30 - 50 Figure 16. Collector Saturation Region - 1.0 + 1.0 - 0.8 VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 - 0.6 VBE(on) @ VCE = -1.0 V COEFFICIENT (mV/ C) 0 VC for VCE(sat) - 1.0 VB for VBE - 0.4 - 2.0 - 0.2 VCE(sat) @ IC/IB = 10 0 - 1.0 - 2.0 - 3.0 - 5.0 - 10 - 20 - 30 - 50 - 100 - 200- 300 - 500 - 1000 IC, COLLECTOR CURRENT (mA) - 3.0 - 4.0 - 1.0 - 2.0 - 3.0 - 5.0 - 10 - 20 - 30 - 50 - 100 - 200 - 300 - 500 - 1000 IC, COLLECTOR CURRENT (mA) Figure 17. "On" Voltages Figure 18. Temperature Coefficients Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 BC161-16 RATINGS AND THERMAL DATA - 3.0 - 2.0 IC, COLLECTOR CURRENT (AMP) - 1.0 - 0.5 - 0.3 - 0.2 - 0.1 - 0.07 - 0.05 - 0.03 - 1.0 TJ = 200C SECONDARY BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED TC = 25C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 0.1 ms The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 19 is based upon TJ(pk) = 200C; TC is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 200C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 1.0 ms dc - 2.0 - 3.0 - 5.0 - 7.0 - 10 - 20 - 30 - 50 - 70 - 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 19. Safe Operating Area 6 Motorola Small-Signal Transistors, FETs and Diodes Device Data BC161-16 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION J MEASURED FROM DIMENSION A MAXIMUM. 4. DIMENSION B SHALL NOT VARY MORE THAN 0.25 (0.010) IN ZONE R. THIS ZONE CONTROLLED FOR AUTOMATIC HANDLING. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. DIMENSION D APPLIES BETWEEN DIMENSION L AND K MINIMUM. LEAD DIAMETER IS UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D E F G H J K L M P R INCHES MIN MAX 0.335 0.370 0.305 0.335 0.240 0.260 0.016 0.021 0.009 0.041 0.016 0.019 0.200 BSC 0.028 0.034 0.029 0.045 0.500 0.750 0.250 --- 45 _BSC --- 0.050 0.100 --- MILLIMETERS MIN MAX 8.51 9.39 7.75 8.50 6.10 6.60 0.41 0.53 0.23 1.04 0.41 0.48 5.08 BSC 0.72 0.86 0.74 1.14 12.70 19.05 6.35 --- 45 _BSC --- 1.27 2.54 --- R -A- B C SEATING PLANE -T- E F P D 3 PL 0.36 (0.014) L K M TA M H M -H- 1 2 3 G M J STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR CASE 079-04 (TO-205AD) ISSUE N Motorola Small-Signal Transistors, FETs and Diodes Device Data 7 BC161-16 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 81-3-3521-8315 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps 8 BC161-16/D Motorola Small-Signal Transistors, FETs and Diodes Device Data |
Price & Availability of BC16116
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |